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publication date : decem ber 201 3 1 < dual - in - line package intelligent power module > pss 5 0 s 71f6 transfer molding type insulated type outline main function and ratings ? 3 phase dc/ac inverter ? 6 00v / 50a (cstbt) ? n - side igbt open emitter ? built - in bootstrap diodes with current limiting res istor application ? ac 100 ~ 240vrms (dc voltage:400v or below) class low power motor control type name ps s 50 s 71 f6 w ith temperature output function integrated drive, protection and system control functions for p- side : drive circuit, high voltage high - speed level shifting, control supply under - voltage (uv) protection for n - side : drive circuit, control supply under - voltage protection (uv), short circuit protection (sc) , fault signaling : correspondin g to sc fault (n - side igbt), uv fault (n - side supply) temperature output : outputting lvic temperature by analog signal input interface : 3, 5v line, schmitt t rigger receiver circuit (high active) ul recognized : ul1557 file e 80276 inte rnal circui t v ufb ( 1 ) v vf s (7 ) v wf s (1 3 ) w( 34 ) v p (12 ) w p (18 ) u p ( 6 ) v p1 (4 ) u n (21 ) v n (22 ) w n (23 ) f o (2 4) v n1 (28 ) v nc (27 ) nw( 31 ) cin(26 ) nu( 33 ) nv( 32 ) v ( 35 ) u ( 36 ) p ( 37 ) v ot (20 ) v ufb ( 3 ) v vfb (9 ) v wfb (15 ) v p1 ( 10 ) v p1 (16 ) c f o(25 ) dipipm hvic1 hvic2 hvic3 ho ho ho w out v out u out igbt1 di1 igbt2 di2 igbt3 di3 igbt4 di4 igbt5 di5 igbt6 di6 lvic
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 2 maximum ratings (t j = 25c, unless otherwise noted) inverter part symbol parameter condition ratings unit v cc supply voltage applied between p - nu,nv,nw 450 v v c c (surge) supply voltage (surge) applied between p - nu,nv,nw 500 v v ces collect or - emitter voltage 600 v i c each igbt collector current t c = 25c 30 a i o p output current (peak) sine - wa ve, t c = 25c , fo 1hz 50 a i cp each igbt collector current (peak) t c = 25 c , less than 1 ms 100 a p c collector dissipation t c = 25 c , per 1 chip 100 w t j junction temperature - 2 0 ~ +1 50 c control (protection) part symbol parameter c ondition ratings unit v d control supply voltage applied between v p1 - v n c , v n 1 - v n c 20 v v d b control supply voltage applied between v ufb - v ufs , v vfb - v vfs ,v wfb - v wfs 20 v v in input voltage applied between u p , v p , w p - v pc , u n , v n , w n - v nc - 0.5 ~ v d +0.5 v v fo fault output supply voltage applied b etween f o - v nc - 0.5 ~ v d +0.5 v i fo fault output current sink current at f o terminal 1 ma v sc current sensing input voltage applied between cin - v nc - 0.5 ~ v d +0.5 v total system symbol parameter c ondition ratings unit v cc(prot) self protection supply volta ge limit ( s hort circuit protection capability) v d = 13.5 ~ 16.5 v , inverter part t j = 125 c , non - repetitive, less than 2 s 400 v t c module case operation temperature measurement point of tc is provided in fig.1 - 2 0 ~ +100 c t stg storage temperature - 40 ~ +125 c v iso isolation voltage 60 hz, sinusoidal , ac 1 min, between connected all pins and heat sink plate 2 500 v rms fig. 1 : t c measurement point thermal resistance symbol parameter c ondition limits unit min . typ . max . r th(j - c)q j unction to case t hermal r esistance (note 1 ) inverter igbt part (per 1/6 module) - - 1. 0 k /w r th(j - c)f inverter fwdi part (per 1/6 module) - - 2. 0 k /w note 1 : grease with good thermal conductivity and long - term endurance should be applied evenly with about +100m~+200m on the contacting surface of dipipm and heat sink. the contacting thermal resistance between dipipm case and heat sink rth(c - f) is determined by the thickness and the thermal conductivity of the applied grease. for reference, rth(c - f) is abo ut 0. 3 k /w (per 1/6 module, grease thickness: 20m, thermal conductivity: 1.0w/m?k). control terminals tc point igbt chip position fwdi chip position power terminals heat sink side groove 17.7mm 18mm
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 3 electrical characteristics (t j = 25c, unless otherwise noted) inverter part symbol parameter c ondition limits unit min . typ . max . v ce(sat) collector - e mitter s aturation v oltage v d =v db = 15 v, v in = 5 v i c = 50a , t j = 25 c - 1. 5 0 2.0 0 v i c = 50a , t j = 125 c - 1. 6 0 2. 1 0 v ec fwdi f orward v oltage v in = 0 v , - i c = 50a - 1. 6 0 2. 1 0 v t on switching t ime s v cc = 300v , v d = v d b = 15 v i c = 50a , t j = 125c , v in = 0 ? 5v inductive load (upper - lower arm) 1.0 5 1. 6 5 2. 30 s t c(on) - 0.50 0.80 s t off - 2.00 2. 60 s t c(off) - 0.40 0. 9 0 s t rr - 0. 6 0 - s i ces collector - e mitter c ut - off c urrent v ce =v ces t j = 25 c - - 1 ma t j = 125 c - - 10 control (protection) part symbol par ameter condition limits unit min. typ. max. i d circuit current total of v p1 - v nc , v n1 - v nc v d =15v, v in =0v - - 6.00 ma v d =15v, v in =5v - - 6.0 0 i db each part of v ufb - v uf s , v vfb - v vf s , v wfb - v w f s v d =v db =15v, v in =0v - - 0. 55 v d =v db =15v, v in =5v - - 0. 55 v sc(ref) short circuit trip level v d = 15v (note 2 ) 0.4 5 0.48 0. 5 1 v uv dbt p - side control supply under - voltage protection(uv) t j 125 c trip level 10.0 - 12.0 v uv dbr reset level 10.5 - 12. 5 v uv dt n - side control supply under - voltage protection(uv) trip level 10.3 - 12.5 v uv dr reset level 10.8 - 13.0 v v ot temperature output pull down r=5k (note 3 ) lvic temperature=90 c 2. 51 2. 64 2. 76 v v foh fault output voltage v sc = 0v, f o terminal pull ed up to 5v by 10k 4.9 - - v v fol v sc = 1v, i fo = 1ma - - 0.95 v t fo fault output pulse width c f o =22nf (note 4 ) 1.6 2.4 - m s i in input current v in = 5v 0.70 1.00 1.50 ma v th(on) o n threshold voltage applied between u p , v p , w p , u n , v n , w n - v nc - 2.1 0 2.6 0 v v th(off) off threshold voltage 0.8 0 1.3 0 - v th(hys) on/off threshold hysteresis voltage 0.35 0. 80 - v f bootstrap di forward voltage i f =10ma including voltage drop by limiti ng resistor (note 5 ) 0.5 0.9 1 .3 v r built - in limiting resistance included in bootstrap di 16 20 24 note 2 : sc protection works only for n - side igbt . please select the external shunt resistance such that the sc trip - level is less than 2.0 times of the current rating. 3 : dipipm don't shutdown igbts and output fault signal automatically when temperatu re rises excessively. when temperature exceeds the protective level that user defined, controller (mcu) should stop the dipipm. temperature of lvic vs. v ot output characteristics is described in fig. 3 . 4 : fault signal fo outputs when sc or uv protection works. fo pulse wid th is different for each protection modes. at sc failure , fo pulse width is a fixed width which is specified by the capacitor connected to c fo terminal. ( c fo =9.1 x 10 - 6 x t fo [f]) , but at uv failure, fo output s continuously until recover ing from uv state. (but minimum fo pulse width is the specified time by c fo . ) 5 : the characteristic s of bootstrap di is described in fig.2 . fig. 2 characteristics of bootstrap di v f - i f curve (@ta=25 c) including voltage drop by limiting resistor (right c hart is enlarged chart.) 0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 i f [ma] v f [v] 0 5 10 15 20 25 30 35 40 45 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i f [ma] v f [v]
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 4 fig. 3 temperature of lvic vs. v ot output characteristics 2.51 2.64 2.76 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 55 65 75 85 95 105 115 vot o utp ut (v) _ lvic temperature ( c) typ. max. min. fig. 4 v ot output c ircuit (1) it is recommended to insert 5k (5.1k is recommended) pull down resistor for getting linear output characteristics at low temperature below room temperature. when the pull down resistor is inserted between v ot and v nc (control gnd), the extra circuit curr ent , which is calculated approximately by v ot output voltage divided by pull down resistance , flows as lvic circuit current continuously. in the case of using v ot for detecting high temperature over room temperature only, it is un necessary to insert the pu ll down resistor. (2) in the case of using v ot with low voltage controller like 3.3v mcu, v ot output might exceed control supply voltage 3.3v when temperature rises excessively . i f system uses low voltage controller, it is recommended to insert a clamp di between control supply of the controller and v ot output for preventing over voltage destruction . (3) in the case of not using v ot , leave v ot output nc ( n o c onnection). refer the application note for this product about the usage of v ot . ref v ot temperature signal v nc inside lvic of dipipm mcu 5k
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 5 mechanical charact eristics and ratings parameter c ondition limits unit min . typ . max . mounting torque mounting screw : m 3 (note 6 ) recommended 0.78 n m 0.59 0. 78 0. 98 n m terminal pulling strength load 9.8n eiaj - ed - 4701 10 - - s terminal bending strength load 4.9n , 90deg. bend eiaj - ed - 4701 2 - - times weight - 21 - g heat - sink flatness (note 7 ) - 50 - 100 m note 6 : plain washers (iso 7089~ 7094) are recommended . note 7 : measurement point of heat sink flatness recommended operation condition s symbol parameter c ondition limits unit min . typ . max . v cc supply voltage applied between p - nu, nv, nw 0 300 400 v v d control supply voltage applied between v p1 - v n c , v n1 - v nc 13.5 15.0 16.5 v v db control supply voltage applied between v ufb - v ufs , v vfb - v vfs , v wfb - v wfs 13.0 15.0 18.5 v v d , v db control supply variation - 1 - +1 v/ s t dead arm shoot - through blocking time for each input signal 2.0 - - s f pwm pwm input frequency t c 100 c , t j 125 c - - 20 khz i o allowable r.m.s. current v cc = 300v , v d = 15 v, p.f = 0.8 , s inusoidal pw m t c 100c , t j 125c (note 8 ) f pwm = 5khz - - 2 5 .0 arms f pwm = 15khz - - 1 7 .0 pwin(on) minimum input pulse width (note 9 ) 0.7 - - s pwin(off) 200v v cc 350v, 13.5v v d 16.5v, 13.0v v d b 18.5v, - 20 c tc 100 c , n - line wiring inductance less tha n 10nh ( note 10 ) below rated current 1.5 - - between rated current and 1.7 times of rated current 3.0 - - between 1.7 times and 2.0 times of rated current 3. 6 - - v n c v nc variation between v nc - nu, nv, nw (including surge) - 5.0 - +5.0 v t j jun ction temperature - 20 - + 125 c note 8 : a llowable r.m.s. current depends on the actual application conditions. 9 : dipipm might not make response if the input signal pu lse width is less than pwin(on) 10: ipm might make delayed response or no response for the input signal with off pulse width less than pwin(off). please refer below about delayed respon s e. delayed r esponse a gainst shorter input off signal t han pwin(off) (p - side only) 4.65mm + + - measurement position heat sink side heat sink side 12.78mm 13.5mm 23mm - p side control input internal igbt gate output current ic t1 t2 real line: off pulse width > pwin(off); turn on time t1 broken line: off pulse width < pwin(off); turn on time t2 (t1:normal switching time)
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 6 fig. 5 timing charts o f the d ipipm protective functions [a] short -c ircuit protection ( n - side only with the external shunt resistor and rc filter) a1. normal operation: igbt on and outputs current. a2. short circuit current detection (sc trigger) (it is recommended to set rc time constant 1.5~2.0 s so that igbt shut down within 2.0 s when sc.) a3. all n - side igbt 's gate s are hard interrup ted . a4. all n - side igbt s turn o f f. a5. f o outputs . the pulse width of the f o signal is set by the external capacitor c fo . a6. input = ? l ? : igbt off a7. fo finish es output, but igbt s don't turn on until inputting next on signal ( l ? h ). ( igbt of e ach phase can return to normal state by inputting on signal to each phase.) a8. normal operation: igbt on and outputs current. [b] under - voltage protection ( n - side, uv d ) b1. control supply voltage v d exceeds under voltage reset level ( uv dr ) , but igbt turns on by next on signal ( l ? h ) . ( igbt of e ach phase can retu rn to normal state by inputting on signal to each phase.) b2. normal operation: igbt on and outputs current. b3. v d level d rop s to u nder voltage trip level. (uv dt ). b4. all n - side igbt s turn off in spite of control input condition. b5. fo output s for the period set by the capacitance c fo, but output is extended during v d keeps below uv dr . b6. v d level reaches uv dr . b7. normal operation: igbt on and output s current. lower - side control input protection circuit state internal igbt gate output current ic sense voltage of the shunt resistor error output fo sc trip current level a2 set reset sc reference voltage a1 a3 a6 a7 a4 a8 a5 d elay by rc filtering uv dr reset set reset uv dt b1 b2 b3 b4 b6 b7 b 5 control input protection circuit state control supply voltage v d output current ic error output fo
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 7 [c] under - voltage protection ( p- side, uv db ) c1. control supply voltage v db ris es. after the voltage reaches under voltage reset level uv dbr , igbt turn s on by next on signal ( l ? h ) . c2. normal operation: igbt on and outputs current. c3. v db level d rops to u nder voltage trip level (uv dbt ). c4. igbt of the correspond phase only t urns off in spite of control input signal level, but there is no f o signal output. c5. v db level reaches uv d br . c6. normal operation: igbt on and outputs current. control input protection circuit state control supply voltage v db output current ic error output fo uv dbr reset set reset uv dbt keep h igh - level (no fault output) c 1 c 2 c 3 c 4 c5 c6
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 8 fig. 6 example o f application circuit (1) if control gnd is connected with power gnd by common broad pattern, it may cause malfunction by power gnd fluctuation. it is recommended to connect control gnd and power gnd at only a point n1 (near the terminal of shunt resistor). (2) it is recommended to insert a zener diode d1 (24v/1w) between each pair of control supply terminals to prevent surge destruction. (3) to prevent surge destruction, the wiring between the smoothing capacitor and the p, n1 terminals should be as short as possib le. gene rally a 0.1 - 0.22 f snubber capacitor c3 between the p - n1 terminals is recommended. (4) r1, c4 of rc filter for preventing protection circuit malfunction is recommended to select tight tolerance, temp - compensated type. t he time constant r1c4 should be set so t hat sc current is shut down within 2s. ( 1.5s~2s is recommended generally .) sc interrupting time might vary with the wiring pattern , so the enough evaluation on the real system is necessary. (5) to prevent malfunction, the wiring of a, b, c should be as shor t as possible. (6) the point d at which the wiring to cin filter is divided should be near the terminal of shunt resistor. nu, nv, nw terminals should be connected at near nu, nv, nw terminals when it is used by one shunt operation . low inductance smd type wit h t ight tolerance, temp - compensated type is recommended for shunt resistor . (7) all capacitors should be mounted as close to the terminals as possible. (c1 : good temperature, frequency c har acteris tic e lectrolytic type and c2:0.22 - 2 f, good temperature, frequency and dc bias characteristic ceramic type are recommended.) (8) input logic is high - active . there is a 3.3k (min.) pull - down resistor in the input circuit of ic. to prevent malfunction, the input wiring should be as short as po ssible. when using rc coupling , make the input signal level meet the turn - on and turn - off threshold voltage. (9) f o output is open drain type. it should be pulled up to power supply of mcu ( e.g. 5v, 3.3 v) by a resistor that makes i fo up to 1ma. (i fo is estimate d roughly by the formula of control power supply voltage divided by pull - up resistance. in the case of pulled up to 5v, 10k (5k or more) is recommended.) w h en using opto coupler, fo also can be pulled up to 15v (control supply of dipipm) by the resistor. (10) fo pulse width can be set by the capacitor connected to cfo terminal. c fo (f) = 9.1 x 10 - 6 x t fo (required fo pulse width) . (11) if high frequency noise superimposed to the control supply line, ic malfunction might happen and cause dipipm erroneous operation. to avoid such problem, line ripple voltage should meet dv/dt +/ - 1v/ s, vripple 2vp- p. (12) for dipipm, it isn't recommended to drive same load by parallel connection with other phase igbt or other dipipm. long gnd wiring here might generate noise to input signal and cause igbt malfunction. long wiring here might cause sc level fluctuation and malfunction. long wiring here might cause short circuit failure power gnd wiring control gnd wiring m mcu c2 15v vd c4 r1 shunt resistor n1 b c 5v a + u n (21) v n (22) w n (23) fo(24) v n1 (28) v nc (27) p u w nu lvic v cin( 26) nv nw igbt1 igbt2 igbt3 igbt4 igbt5 igbt6 di1 di2 di3 di4 di5 di6 c1 d cfo(25) d1 c3 + r2 v ot ( 20 ) 5k w p (18) v wfb (15) v wfs (13) c1 d1 c2 + v p1 (16) c2 hvic v p (12) v vfb (9) v vfs (7) c1 d1 c2 + v p1 (10) c2 hvic u p (6) v ufb (3) v ufs (1) c1 d1 c2 + v p1 (4) c2 hvic
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 9 fig. 7 mcu i/o i nterface c ircuit fig. 8 pattern wiring around the shunt resistor fig. 9 pattern wiring around the shunt resistor (for the case of open emitter) when dipipm is operated with three shunt resistors, voltage of each shunt resistor cannot be input to cin terminal directly. in that case, it is necessary to use the external protection circuit as below. (1) it is necessary to set the time constant r f c f of external comparator input so that igbt stop s within 2 s when short circuit occurs. sc interrupting time might vary with the wiring pattern, comparator speed and so on. (2) it is recommended for t he threshold v oltage vref to s et to the same rating of short circuit trip level (vsc(ref) : typ. 0.48v). (3) s elect the external shunt resist ance so that sc trip - level is less than specified value (= 2.0 times of rating current). (4) to avoid malfunction, the wiring a, b, c sh ould be as short as possible. (5) the point d at which the wiring to comparator is divided should be close to the terminal of shunt resistor. (6) or output high level when protection works should be over 0.5 1 v (=maximum vsc(ref) rating ). (7) gnd of comparator, gnd of vref circuit and cf should be not connected to power gnd but to control gnd wiring. u p ,v p ,w p ,u n ,v n ,w n fo v nc (logic) dipipm mcu 10k 5v line 3.3k (min) note) design for input rc filter depends on pwm control scheme used in the application and wiring impedance of the printed circuit board. dipipm input signal interface integrates a minimum 3.3k pull - down resistor. therefore, when inserting rc filter, it is necessary to satisfy turn - on threshold voltage requirement. fo output is open drain type . it should be pulled up to control power supply (e.g. 5v , 15v ) with a resistor that makes fo sink current i fo 1ma or less . in the case of p ull ed up to 5v supply, 10k 5k or more is recommended. p v u w n - side igbt p - side igbt drive circuit dipipm v nc nw drive circuit cin nv nu - vref + vref vref comparators (open collector output type) external protection circuit protection circuit shunt resistors r f c f 5v b a c or output d n1 - + - + wiring inductance should be less than 10nh. i nductance of a copper pattern with length=17mm, width=3mm is about 10nh. nu, nv, nw should be connected each other at near terminals. n1 v nc nu nv nw dipipm v nc gnd wiri ng from v nc should be connected close to the terminal of shunt resistor . shunt resistor dipipm nu nv nw n1 low inductance shunt resistor like s urface mounted (smd) type is recommended . gnd wiring from v nc should be connected close to the terminal of shunt resistor . shunt resistor s each w iring inductance should be less than 10nh. inductance of a copper pattern with length=17mm, width=3mm is about 10nh.
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 10 fig. 10 p ackage o utlines dimensions in mm qr code is registered trademark of denso wave incorporated in japan and other countries.
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 11 revision record rev. date page revised content s 1 12 / 2 5 /201 3 - new
< dual - in - line package intelligent power module > pss 50s 71f6 transfer molding type insulated type publication date : decem ber 201 3 12 ? 201 3 mitsubishi electric corporation. all rights res erved. dipipm and cstbt are registered trademarks of mitsubishi ele c tric corporation. keep safety first in your circuit designs! mitsub ishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property d amage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non - flammable material or (iii) prevention against any malfunction or mis hap. notes regarding these materials ? these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under a ny intellectual property rights, or any other rights, belonging to mitsubishi electri c corporation or a third party. ? mitsubishi electric corporation assumes no responsibility for any damage, or infringement of any third - party?s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents infor mation on products at the time of publication of these material s, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electr ic corporation or an authorized m itsubishi semiconductor product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubi shi semiconductor home page (http: //www . m itsubishi e lectric.com/ ). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a to tal system before making a final decision on the applicability of the information and products. mitsubishi electric corporation assumes no responsibility for any damage, liability or other loss resulting from th e information contained herein. ? mitsubishi e lectric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or underse a repeater use. ? the prior written approval of mitsubishi electric corporation is necessary to reprint or reproduce in wh ole or in part these materials. ? if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or re - export contrary to the export control laws and regulations of japan and/or the country of destination is p rohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these materials or the products contained therein.

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